EXCITED-STATES OF DX IN GA1-XALXAS

被引：13
|
作者：
VONBARDELEBEN, HJ [1 ]
BOURGOIN, JC [1 ]
DELERUE, C [1 ]
LANNOO, M [1 ]
机构：
[1] INST SUPER ELECTR N,ETUD SURFACE & INTERFACES LAB,F-59046 LILLE,FRANCE
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.44.9060
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoexcited neutral states of the Sn donors in Ga1-xAlxAs alloys are studied both experimentally and theoretically. Two types of donor states are evidenced: a deep strongly localized one, D0, as well as a delocalized effective-mass state d0. Both belong to the principal donor Sn(Ga), as confirmed by EPR measurements on Sn-119-enriched samples. The D0 state is consistently modeled as the A1(ab) antibonding donor state. Theory predicts the coexistence of both states D0, d0 in an intermediate alloying range. This level scheme also explains the results of the Si and Te donor reported previously.
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页码：9060 / 9063
页数：4
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