Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1-xAlxAs semiconductor superlattice

被引：0
|
作者：
Mughnetsyan, V. N. [1 ]
Kirakosyan, A. A. [1 ]
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2009年 / 44卷 / 03期
关键词：
semiconductor superlattice; quantum dots; interdiffusion; confining potential; band structure; INAS QUANTUM DOTS;
D O I：
10.3103/S1068337209030086
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga1-xAlxAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots' spherical symmetry and to the broadening of the superlattice energy minibands.
引用
收藏
页码：140 / 144
页数：5
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