NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION

被引：29

|

作者：

HSIEH, CM

MAHER, DM

机构：

[1] BELL LABS,READING,PA 19604

[2] BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1302 / 1306

页数：5

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