THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON

被引：96

作者：

LIN, AM

DUTTON, RW

ANTONIADIS, DA

TILLER, WA

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[3] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127563

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1121 / 1130

页数：10

共 50 条

[1] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION
HSIEH, CM
MAHER, DM
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1302 - 1306
[2] POINT-DEFECT GENERATION DURING SILICON OXIDATION
DUNHAM, S
PLUMMER, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C317 - C317
[3] EFFECTS OF TRICHLOROETHANE ON GENERATION AND ANNIHILATION OF STACKING-FAULTS DURING OXIDATION OF (100) SILICON
LINSSEN, AJ
PEEK, HL
[J]. PHILIPS JOURNAL OF RESEARCH, 1980, 35 (4-5) : 263 - 275
[4] STRESS EVOLUTION AND POINT-DEFECT GENERATION DURING OXIDATION OF SILICON
CHARITAT, G
MARTINEZ, A
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 909 - 913
[5] SI-SIO2 INTERFACE STATES ENHANCED BY OXIDATION-INDUCED STACKING-FAULTS
YOSHIDA, H
OHMORI, M
NIU, H
KISHINO, S
TANAKA, H
NAKASHIZU, T
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2389 - 2390
[6] ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
MURARKA, SP
[J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2849 - 2857
[7] EFFECT OF HCL ON SILICON POINT-DEFECT FORMATION DURING THERMAL-OXIDATION OF (100) FLOAT ZONE SILICON-WAFERS
OH, S
TILLER, WA
HAHN, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1125 - 1126
[8] COMPARISON BETWEEN THE GROWTH AND SHRINKAGE OF OXIDATION STACKING-FAULTS IN SILICON AND SILICON ON INSULATOR
TSAMIS, C
TSOUKALAS, D
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3246 - 3249
[9] THE SHRINKAGE AND GROWTH OF OXIDATION STACKING-FAULTS IN SILICON AND THE INFLUENCE OF BULK OXYGEN
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3666 - 3671
[10] ROLE OF POINT-DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING-FAULTS IN SILICON - RETROGROWTH AND EFFECT OF HCL OXIDATION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C92 - C92

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