POINT-DEFECT GENERATION DURING SILICON OXIDATION

被引：0

作者：

DUNHAM, S ^{[1
]}

PLUMMER, J ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C317 / C317

页数：1

共 50 条

[1] STRESS EVOLUTION AND POINT-DEFECT GENERATION DURING OXIDATION OF SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 909 - 913
[2] POINT-DEFECT KINETICS AND DOPANT DIFFUSION DURING SILICON OXIDATION
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 627 - 629
[3] POINT-DEFECT GENERATION DURING OXIDATION OF SILICON IN DRY OXYGEN .2. COMPARISON TO EXPERIMENT
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2551 - 2561
[4] INVESTIGATION OF POINT-DEFECT GENERATION IN SILICON DURING OXIDATION OF A DEPOSITED WSI2 LAYER
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1092 - 1094
[5] MODELING OF IMPURITY DIFFUSION IN SILICON DURING OXIDATION BASED ON POINT-DEFECT KINETICS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C324 - C324
[6] POINT-DEFECT GENERATION DURING SILICIDE FORMATION
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OSTLING, M
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[J]. APPLIED SURFACE SCIENCE, 1991, 53 : 224 - 229
[7] IMPLICATIONS OF OXIDATION MODELS ON THE POINT-DEFECT BEHAVIOR IN THE SILICON SUBSTRATE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C138 - C138
[8] POINT-DEFECT COMPLEXING IN SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C91 - C91
[9] THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1121 - 1130
[10] EVIDENCE FOR INTRINSIC POINT-DEFECT GENERATION DURING HYDROGEN-PLASMA TREATMENT OF SILICON
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WEBER, J
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[J]. PHYSICA B, 1991, 170 (1-4): : 218 - 222

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