FORMATION OF STACKING-FAULTS IN WEAKLY DOPED SILICON EPITAXIAL LAYERS

被引：0

作者：

KUZNETSOV, VP ^{[1
]}

ANDREEV, AY ^{[1
]}

ABROSIMOVA, LN ^{[1
]}

TOLOMASOV, VA ^{[1
]}

机构：

[1] GORKI ENGN PHYS RES INST,GORKI,USSR

来源：

INORGANIC MATERIALS | 1986年 / 22卷 / 11期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1663 / 1664

页数：2

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[1] STACKING-FAULTS IN SILICON EPITAXIAL LAYERS
AHARONI, H
[J]. VACUUM, 1976, 26 (4-5) : 167 - 180
[2] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON
MAHAJAN, S
ROZGONYI, GA
BRASEN, D
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75
[3] FORMATION, STRUCTURE AND PROPERTIES OF EPITAXIAL STACKING-FAULTS
MATYNA, LI
PEKAREV, AI
TCHISTYAKOV, YD
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1979, 22 (09): : 3 - 12
[4] OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS
CONTI, M
CORDA, G
MATTEUCCI, R
GHEZZI, C
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 705 - 713
[5] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON WAFERS
MAHAJAN, S
ROZGONYI, GA
BRASEN, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C270 - C270
[6] OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS
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LEVINSTEIN, HJ
MARCUS, RB
WAGNER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 4001 - 4003
[7] FORMATION OF STACKING-FAULTS IN SELECTIVE OXIDATION OF SILICON
SHINDO, M
OSADA, Y
KANEKO, N
MASUDA, M
[J]. DENKI KAGAKU, 1978, 46 (03): : 166 - 171
[8] THE EFFECT OF POINT-DEFECTS ON SILICON EPITAXIAL STACKING-FAULTS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C355 - C355
[9] PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICON
CHEN, MC
SILVESTRI, VJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C368 - C368
[10] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

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