INVESTIGATION OF ACCIDENTAL DEEP CENTERS IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES BY THE CAPACITANCE METHOD

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作者：
ABDURAKHMANOV, KP
BERMAN, LS
VLASOV, SI
KOTOV, BA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 07期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：848 / 849
页数：2
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