CdS nanoparticles embedded in metal-insulator-semiconductor structures

被引：1

作者：

Malik, S ^{[1
]}

Ray, AK ^{[1
]}

Hassan, AK ^{[1
]}

Nabok, AV ^{[1
]}

机构：

[1] Sheffield Hallam Univ, Nanotechnol Res Labs, Elect Res Grp, Sch Engn, Sheffield S1 1WB, S Yorkshire, England

来源：

PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY | 2002年

关键词：

Aluminum; Atmosphere; Capacitance measurement; Hydrogen; Metal-insulator structures; Nanoparticles; Semiconductor films; Silicon; Substrates; Voltage;

D O I：

10.1109/NANO.2002.1032243

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metal-Insulator-Semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage Is found to be 0.5V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix is estimated to be 5.2.

引用

页码：265 / 268

页数：4

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