Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures

被引：0

作者：

S. G. Dmitriev

Yu. V. Markin

机构：

[1] Russian Academy of Sciences (Fryazino Branch),Institute of Radio Engineering and Electronics

来源：

Semiconductors | 2002年 / 36卷

关键词：

Magnetic Material; Surface State; Electromagnetism; Equilibrium Distribution; Ionic Surface;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The equilibrium distribution of mobile ions was considered in metal-insulator-semiconductor (MIS) structures with ionic surface states at the insulator-semiconductor interface. The quasi-steady currentvoltage characteristics were calculated for ion currents in MIS structures. The population of surface states by ions was described by the Gibbs distribution.

引用

页码：197 / 202

页数：5

共 50 条

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