Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures

被引：6

作者：

Dmitriev, SG ^{[1
]}

Markin, YV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141120, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 02期

关键词：

Magnetic Material; Surface State; Electromagnetism; Equilibrium Distribution; Ionic Surface;

D O I：

10.1134/1.1453438

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The equilibrium distribution of mobile ions was considered in metal-insulator-semiconductor (MIS) structures with ionic surface states at the insulator-semiconductor interface. The quasi-steady current-voltage characteristics were calculated for ion currents in MIS structures. The population of surface states by ions was described by the Gibbs distribution. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：197 / 202

页数：6

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