DIFFUSION AND OXIDATION OF SILICON

被引：0

作者：

FAIR, RB ^{[1
]}

机构：

[1] DUKE UNIV, DEPT ELECT ENGN, DURHAM, NC 27706 USA

来源：

ADVANCES IN CHEMISTRY SERIES | 1989年 / 221期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：265 / 323

页数：59

共 50 条

[11] OXIDATION ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN (100) SILICON
TANIGUCHI, K
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2243 - 2248
[12] Model of thermal oxidation of silicon with diffusion coefficient relaxation
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[J]. Semiconductors, 2010, 44 : 1637 - 1643
[13] OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA
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[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (16): : 1773 - 1775
[14] OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1360 - 1368
[15] OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
TANIGUCHI, K
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KASHIWAGI, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C122 - C122
[16] SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT THROUGH SILICON DIOXIDE FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C395 - C395
[17] THE OXIDATION RATE DEPENDENCE OF OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
LIN, AM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1131 - 1137
[18] Diffusion of near surface defects during the thermal oxidation of silicon
Ganem, JJ
Trimaille, I
Andre, P
Rigo, S
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Baumvol, IJR
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 8109 - 8111
[19] Oxidation enhanced diffusion of boron in silicon-on-insulator substrates
Pindl, S
Biebl, M
Hammerl, E
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vonPhilipsborn, H
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[20] EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON
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[J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 709 - 717

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