Oxidation enhanced diffusion of boron in silicon-on-insulator substrates

被引：0
|
作者：
Pindl, S
Biebl, M
Hammerl, E
Schafer, H
vonPhilipsborn, H
机构：
来源：
ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY | 1997年 / 1997卷 / 03期
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中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The oxidation enhanced diffusion (OED) of boron and diffusion as well as recombination, of interstitials on silicon-on-insulator (SOI) material have been studied in periodically boron doped silicon. Bonded wafers (BESOI, UNIBOND) as well as oxygen-implanted wafers (SIMOX) have been used to consider different interface morphologies. Diffusion experiments were performed in the temperature range of 800 degrees C to 1050 degrees C and compared with SUPREM-IV simulation results. Parameters like recombination velocity and diffusivity of interstitials have been extracted. Results show for the first time that OED is effectively reduced in SOI material in the near Si/SiO2-interface region as well as in the surface region.
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页码：623 / 631
页数：9
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