DIFFUSION AND OXIDATION OF SILICON

被引：0
|
作者：
FAIR, RB [1 ]
机构：
[1] DUKE UNIV, DEPT ELECT ENGN, DURHAM, NC 27706 USA
来源：
ADVANCES IN CHEMISTRY SERIES | 1989年 / 221期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：265 / 323
页数：59
相关论文
共 50 条
  • [31] DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION
    ONEILL, AG
    BARLOW, RD
    BISWAS, RG
    PHILLIPS, PJ
    TAYLOR, S
    GUNDLACH, A
    [J]. ELECTRONICS LETTERS, 1993, 29 (03) : 263 - 264
  • [32] Water diffusion in silica film during silicon wet oxidation
    Lee, J. -W.
    Tomozawa, M.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (52-54) : 4633 - 4639
  • [33] Oxidation Enhanced Diffusion for Screen Printed Silicon Solar Cells
    Prajapati, Victor
    Horzel, Jorg
    Choulat, Patrick
    Janssens, Tom
    Poortmans, Jef
    Mertens, Robert
    [J]. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 1089 - 1093
  • [34] DIFFUSION VERSUS OXIDATION RATES IN SILICON-GERMANIUM ALLOYS
    EUGENE, J
    LEGOUES, FK
    KESAN, VP
    IYER, SS
    DHEURLE, FM
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (01) : 78 - 80
  • [35] STRIPE WIDTH DEPENDENCE OF OXIDATION-ENHANCED DIFFUSION IN SUBMICRON LOCAL OXIDATION OF SILICON STRUCTURES
    SHIBATA, Y
    TANIGUCHI, K
    HAMAGUCHI, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 4846 - 4852
  • [36] Modeling of diffusion and oxidation in two dimensions during silicon device processing
    P K Singh
    B K Das
    [J]. Bulletin of Materials Science, 1999, 22 : 353 - 362
  • [37] COMBINATION OF LOCAL OXIDATION AND DIFFUSION TO MAKE ISOLATED DEVICE STRUCTURES IN SILICON
    KOOI, E
    VERKUYLE.WH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : C291 - &
  • [38] Oxygen diffusion through the disordered oxide network during silicon oxidation
    Bongiorno, A
    Pasquarello, A
    [J]. PHYSICAL REVIEW LETTERS, 2002, 88 (12) : 4 - 125901
  • [39] Modeling of diffusion and oxidation in two dimensions during silicon device processing
    Singh, PK
    Das, BK
    [J]. BULLETIN OF MATERIALS SCIENCE, 1999, 22 (03) : 353 - 362
  • [40] 18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation
    Doshi, P
    Rohatgi, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) : 1710 - 1716
12345