EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON

被引：25
|
作者：
ALLEN, WG [1 ]
机构：
[1] NEWCASTLE POLYTECH,DEPT PHYS & PHYS ELECTR,NEWCASTLE NE1 8ST,ENGLAND
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 06期
关键词：
D O I：
10.1016/0038-1101(73)90114-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：709 / 717
页数：9
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