MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE

被引：55

作者：

GAWLINSKI, ET ^{[1
]}

GUNTON, JD ^{[1
]}

机构：

[1] TEMPLE UNIV,CTR ADV COMP SCI,PHILADELPHIA,PA 19122

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.36.4774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4774 / 4781

页数：8

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