MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE

被引：55

作者：

GAWLINSKI, ET ^{[1
]}

GUNTON, JD ^{[1
]}

机构：

[1] TEMPLE UNIV,CTR ADV COMP SCI,PHILADELPHIA,PA 19122

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.36.4774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4774 / 4781

页数：8

共 50 条

[21] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNS ON A (100)-ORIENTED SI SUBSTRATE
YOKOYAMA, M
KASHIRO, K
OHTA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 73 - 78
[22] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS (331)
UPPAL, PN
AHEARN, JS
MUSSER, DP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 759 - 760
[23] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331)
UPPAL, PN
AHEARN, JS
MUSSER, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3766 - 3771
[24] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE
KITAGAWA, F
MISHIMA, T
TAKAHASHI, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 937 - 943
[25] SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY
OKAMOTO, A
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1011 - 1015
[26] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI
WRIGHT, SL
KROEMER, H
INADA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2916 - 2927
[27] EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
METZGER, RA
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 931 - 940
[28] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON WITH BURIED IMPLANTED OXIDES
DAS, K
HUMPHREYS, TP
WORTMAN, JJ
POSTHILL, JB
TARN, JCL
PARIKH, N
[J]. ELECTRONICS LETTERS, 1988, 24 (01) : 67 - 68
[29] EXTENDED MODEL OF THE MOLECULAR-BEAM EPITAXIAL-GROWTH KINETICS ON VICINAL SURFACE
TROFIMOV, VI
MEDVEDEV, BK
MOKEROV, VG
SHUMYANKOV, AG
[J]. DOKLADY AKADEMII NAUK, 1995, 344 (01) : 40 - 42
[30] EPITAXIAL-GROWTH OF THIN-FILMS STUDIED BY MOLECULAR-DYNAMICS SIMULATION
SCHNEIDER, M
RAHMAN, A
SCHULLER, IK
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (01) : 39 - 46

← 1 2 3 4 5 →