N-TYPE DOPING OF GALLIUM ANTIMONIDE AND ALUMINUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY, USING LEAD-TELLURIDE AS A DOPANT SOURCE

被引：0
|
作者：
SUBBANNA, S [1 ]
TUTTLE, G [1 ]
KROEMER, H [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：A17 / A17
页数：1
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