INDIUM-ANTIMONIDE DOPED WITH LEAD-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY

A PbTe dopant source has been used to grow n-type InSb using the molecular beam epitaxy growth technique. From Auger electron spectroscopy studies, no surface segregation of tellurium or lead is observed up to approximately 10(19) cm-3 doping levels. The correlation between the PbTe flux used during growth and the electron density in the grown films is very good, suggesting that the incorporation of tellurium is near unity. Six-probe Hall measurements of carrier transport gave room temperature mobilities as high as 51,300 cm2 V-1 s-1 at an electron density of 2.9 x 10(16) cm-3 (54,300 at an electron density of 1.9 x 10(16) cm-3 at 110 K) for a film of 4.0-mu-m thickness on an InP substrate.