N-TYPE DOPING OF GALLIUM ANTIMONIDE AND ALUMINUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY, USING LEAD-TELLURIDE AS A DOPANT SOURCE

被引：0
|
作者：
SUBBANNA, S [1 ]
TUTTLE, G [1 ]
KROEMER, H [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：A17 / A17
页数：1
相关论文
共 50 条
  • [41] DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    PARTIN, DL
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 996 - 997
  • [42] LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    PARTIN, DL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1615 - 1615
  • [43] Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution
    Hall, Michael J.
    Vashaee, Daryoosh
    [J]. MICROMACHINES, 2023, 14 (09)
  • [44] HEAVY P-TYPE AND N-TYPE DOPING WITH SI ON (311) A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    AGAWA, K
    HASHIMOTO, Y
    HIRAKAWA, K
    SAKAMOTO, N
    IKOMA, T
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (09) : 1408 - 1413
  • [45] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS
    HECKINGBOTTOM, R
    DAVIES, GJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647
  • [46] PHOTOLUMINESCENCE DECAY MEASUREMENTS OF N-TYPE AND P-TYPE DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    MASSA, JS
    BULLER, GS
    WALKER, AC
    SIMPSON, J
    PRIOR, KA
    CAVENETT, BC
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (05) : 589 - 591
  • [47] Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy
    Grün, M
    Storzum, A
    Hetterich, M
    Kamilli, A
    Send, W
    Walter, T
    Klingshirn, C
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 457 - 460
  • [48] HEAVY CARBON DOPING OF GAAS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    FISCHER, A
    LANGE, C
    PLOOG, K
    TAPFER, L
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (02) : 183 - 185
  • [49] HALL AND ELECTROREFLECTANCE STUDIES OF THE EFFECTS OF DOPING IN MERCURY-CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    RACCAH, PM
    GARLAND, JW
    ZHANG, Z
    CHU, AHM
    RENO, J
    SOU, IK
    BOUKERCHE, M
    FAURIE, JP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2077 - 2080
  • [50] SULFUR INCORPORATION IN UNDOPED HIGH-PURITY N-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LEE, B
    KIM, MH
    BOSE, SS
    STILLMAN, GE
    LARKINS, EC
    HELLMAN, ES
    SCHLOM, DG
    HARRIS, JS
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 23 - 28
12345