INDIUM ANTIMONIDE-BISMUTH COMPOSITIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
NOREIKA, AJ
TAKEI, WJ
FRANCOMBE, MH
WOOD, CEC
机构：
[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C233 / C233
页数：1
相关论文
共 50 条
  • [1] INDIUM ANTIMONIDE-BISMUTH COMPOSITIONS GROWN BY MOLECULAR-BEAM EPITAXY
    NOREIKA, AJ
    TAKEI, WJ
    FRANCOMBE, MH
    WOOD, CEC
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4932 - 4937
  • [2] INDIUM-ANTIMONIDE DOPED WITH LEAD-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    PARTIN, DL
    HEREMANS, J
    TRUSH, CM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 614 - 618
  • [3] Indium antimonide doped with manganese grown by molecular beam epitaxy
    Partin, DL
    Heremans, J
    Thrush, CM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 860 - 867
  • [4] INDIUM DOPING OF CDTE GROWN BY MOLECULAR-BEAM EPITAXY
    KARCZEWSKI, G
    ZAKRZEWSKI, A
    KUTROWSKI, M
    JAROSZYNSKI, J
    DOBROWOLSKI, W
    GRODZICKA, E
    JANIK, E
    WOJTOWICZ, T
    KOSSUT, J
    BARCZ, A
    [J]. ACTA PHYSICA POLONICA A, 1995, 87 (01) : 241 - 244
  • [5] SULFUR DOPING BEHAVIOR OF GALLIUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY
    POOLE, I
    LEE, ME
    SINGER, KE
    FROST, JEF
    KERR, TM
    WOOD, CEC
    ANDREWS, DA
    ROTHWELL, WJM
    DAVIES, GJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 395 - 399
  • [6] UNINTENTIONAL INDIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MYERS, DR
    DAWSON, LR
    KLEM, JF
    BRENNAN, TM
    HAMMONS, BE
    SIMONS, DS
    COMAS, J
    PELLEGRINO, J
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2321 - 2323
  • [7] GROWTH BY MOLECULAR-BEAM EPITAXY OF INDIUM-ANTIMONIDE ON CLEAVED AND ON POLISHED BARIUM FLUORIDE
    DAVIS, JL
    [J]. THIN SOLID FILMS, 1990, 192 (01) : 111 - 119
  • [8] INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHANG, KH
    LEE, CP
    WU, JS
    LIU, DG
    LIOU, DC
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1640 - 1642
  • [9] AN INVESTIGATION OF MAGNESIUM IN INDIUM-PHOSPHIDE GROWN BY MOLECULAR-BEAM EPITAXY
    CHENG, TS
    AIRAKSINEN, VM
    STANLEY, CR
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6662 - 6667
  • [10] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    CHANG, LL
    ESAKI, L
    HOWARD, WE
    LUDEKE, R
    SCHUL, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662
12345