SULFUR DOPING BEHAVIOR OF GALLIUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引：19
|
作者：
POOLE, I
LEE, ME
SINGER, KE
FROST, JEF
KERR, TM
WOOD, CEC
ANDREWS, DA
ROTHWELL, WJM
DAVIES, GJ
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND
[2] GE RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
[3] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期
关键词：
D O I：
10.1063/1.340251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：395 / 399
页数：5
相关论文
共 50 条
  • [1] P-TYPE DOPING OF GALLIUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY USING SILICON
    ROSSI, TM
    COLLINS, DA
    CHOW, DH
    MCGILL, TC
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (21) : 2256 - 2258
  • [2] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    ANDREWS, DA
    HECKINGBOTTOM, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
  • [3] A DETAILED HALL-EFFECT ANALYSIS OF SULFUR-DOPED GALLIUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY
    LEE, ME
    POOLE, I
    TRUSCOTT, WS
    CLEVERLEY, IR
    SINGER, KE
    ROHLFING, DM
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) : 131 - 137
  • [4] N-TYPE DOPING OF GALLIUM ANTIMONIDE AND ALUMINUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY, USING LEAD-TELLURIDE AS A DOPANT SOURCE
    SUBBANNA, S
    TUTTLE, G
    KROEMER, H
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A17 - A17
  • [5] N-TYPE DOPING OF GALLIUM ANTIMONIDE AND ALUMINUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY USING LEAD-TELLURIDE AS A TELLURIUM DOPANT SOURCE
    SUBBANNA, S
    TUTTLE, G
    KROEMER, H
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : 297 - 303
  • [6] ALGAAS DOPING SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    ACKLEY, DE
    LEE, H
    NOURI, N
    COLVARD, C
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1883 - 1885
  • [7] SILICON DOPING IN INP GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    ASAHI, H
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 780 - 782
  • [8] INDIUM DOPING OF CDTE GROWN BY MOLECULAR-BEAM EPITAXY
    KARCZEWSKI, G
    ZAKRZEWSKI, A
    KUTROWSKI, M
    JAROSZYNSKI, J
    DOBROWOLSKI, W
    GRODZICKA, E
    JANIK, E
    WOJTOWICZ, T
    KOSSUT, J
    BARCZ, A
    [J]. ACTA PHYSICA POLONICA A, 1995, 87 (01) : 241 - 244
  • [9] ANTIMONY DOPING OF ZNTE GROWN BY MOLECULAR-BEAM EPITAXY
    FELDMAN, RD
    AUSTIN, RF
    SHER, A
    SCHNOES, ML
    DOWNEY, SW
    EMERSON, AB
    HARRIS, TD
    SPITZER, RC
    GUALTIERI, GJ
    SCHWARTZ, GP
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 118 (3-4) : 295 - 298
  • [10] SELENIUM DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    SANO, ET
    HORIKOSHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5636 - 5639
12345