CHARACTERIZATION OF INTERFACE STATES IN SUBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES

被引：0

作者：

AUTRAN, JL

SEIGNEUR, F

DELMAS, J

PLOSSU, C

BALLAND, B

机构：

来源：

JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 10期

关键词：

D O I：

10.1051/jp3:1993252

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made a comparative study between different charge pumping techniques (standard, three-level, spectroscopic) and conventional electrical measurements (DLTS, C-V) on submicrometer MOSFET's and MOS devices. The energy distribution of interface states density has been determined for N and P type [100] substrates at different stages of a CMOS process. We have shown that charge pumping techniques are powerful tools for characterizaton and diagnostic which allow to evaluate, with a great sensitivity, the influence of passivation annealings and process accidents on the quality Of Si-SiO2 interface.

引用

页码：1947 / 1961

页数：15

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