CHARACTERIZATION OF INTERFACE STATES IN SUBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES

被引：0
|
作者：
AUTRAN, JL
SEIGNEUR, F
DELMAS, J
PLOSSU, C
BALLAND, B
机构：
来源：
JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 10期
关键词：
D O I：
10.1051/jp3:1993252
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have made a comparative study between different charge pumping techniques (standard, three-level, spectroscopic) and conventional electrical measurements (DLTS, C-V) on submicrometer MOSFET's and MOS devices. The energy distribution of interface states density has been determined for N and P type [100] substrates at different stages of a CMOS process. We have shown that charge pumping techniques are powerful tools for characterizaton and diagnostic which allow to evaluate, with a great sensitivity, the influence of passivation annealings and process accidents on the quality Of Si-SiO2 interface.
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页码：1947 / 1961
页数：15
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