CHARACTERIZATION OF INTERFACE STATES IN SUBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES

We have made a comparative study between different charge pumping techniques (standard, three-level, spectroscopic) and conventional electrical measurements (DLTS, C-V) on submicrometer MOSFET's and MOS devices. The energy distribution of interface states density has been determined for N and P type [100] substrates at different stages of a CMOS process. We have shown that charge pumping techniques are powerful tools for characterizaton and diagnostic which allow to evaluate, with a great sensitivity, the influence of passivation annealings and process accidents on the quality Of Si-SiO2 interface.