A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs

被引：13
|
作者：
Huang, Daming [1 ,2 ]
Liu, W. J. [1 ,2 ]
Liu, Zhiying [1 ,2 ]
Liao, C. C. [3 ]
Zhang, Li-Fei [3 ]
Gan, Zhenghao [3 ]
Wong, Waisum [3 ]
Li, Ming-Fu [1 ,4 ]
机构：
[1] Fudan Univ, Sch Microelect, State Key ASIC & Syst, Shanghai 201203, Peoples R China
[2] Royal Inst Technol, Sch Informat & Commun Technol, S-10044 Stockholm, Sweden
[3] Semicond Mfg Int Corp, Shanghai 201203, Peoples R China
[4] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 02期
关键词：
Charge pumping (CP); interface traps; MOSFETs; negative-bias temperature instability (NBTI); reaction-diffusion model; BIAS TEMPERATURE INSTABILITY; OXIDE; IMPACT; NBTI;
D O I：
10.1109/TED.2008.2010585
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.
引用
收藏
页码：267 / 274
页数：8
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