ELECTRON-BOMBARDMENT INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON

被引：3

|

作者：

HATANAKA, Y

OI, H

ANDO, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：637 / 639

页数：3

相关论文

共 50 条

[41] ELECTRON-BOMBARDMENT INDUCED ANNEALING STAGES IN TYPE GERMANIUM 2
HIRATA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) : 957 - 961
[42] THE EFFECTS OF ELECTRON-BOMBARDMENT ON VACUUM-DEPOSITED AMORPHOUS-GERMANIUM FILMS
JOHNSON, GW
BRODIE, DE
CANADIAN JOURNAL OF PHYSICS, 1991, 69 (05) : 621 - 626
[43] SULFUR APPEARANCE ON THE (110) NI FACE INDUCED BY ELECTRON-BOMBARDMENT
MROZ, S
SURFACE SCIENCE, 1981, 102 (2-3) : L71 - L75
[44] CONTROL OF HOPPING CONDUCTIVITY BY STRUCTURAL MODIFICATION OF AMORPHOUS-SILICON
MULLER, G
KALBITZER, S
PFEILSTICKER, R
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1980, 39 (01): : 21 - 24
[45] ACTIVATIONLESS HOPPING CONDUCTIVITY IN AMORPHOUS-SILICON NITRIDE FILMS
ASADULLAYEV, NA
CHUDINOV, SM
CIRIC, I
SOLID STATE COMMUNICATIONS, 1988, 66 (03) : 261 - 265
[46] THE PRE-EXPONENTIAL FACTOR IN THE CONDUCTIVITY OF AMORPHOUS-SILICON
MOTT, NF
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01): : 19 - 25
[47] CONDUCTIVITY AND DEFECTS IN AMORPHOUS-SILICON DOPING MODULATED MULTILAYERS
ZHANG, DH
HANEMAN, D
THIN SOLID FILMS, 1991, 198 (1-2) : 43 - 51
[48] ELECTRON-SPECTRA UNDER ELECTRON-BOMBARDMENT
DUC, TM
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1981, 36 (206): : 307 - 341
[49] CONDUCTIVITY AND QUENCHED-IN DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
BRANZ, HM
CAPUDER, K
LYONS, EH
HAGGERTY, JS
ADLER, D
PHYSICAL REVIEW B, 1987, 36 (15): : 7934 - 7940
[50] INFUENCE OF ELECTRON BOMBARDMENT ON RADIATION CONDUCTIVITY OF SILICON
ABROYAN, IA
TSEKHNOV.LA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 1029 - +

← 1 2 3 4 5 →