ELECTRON-BOMBARDMENT INDUCED ANNEALING STAGES IN TYPE GERMANIUM 2

被引：2

作者：

HIRATA, M ^{[1
]}

机构：

[1] OSAKA UNIV,COLL GEN EDUC,DEPT PHYS,TOYONAKA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 07期

关键词：

D O I：

10.1143/JJAP.12.957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：957 / 961

页数：5

共 50 条

[1] ELECTRON-BOMBARDMENT INDUCED ANNEALING STAGES IN N-TYPE GERMANIUM-I
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[2] THE ABSENCE OF BOMBARDMENT ANNEALING IN THE ELECTRON BOMBARDMENT OF GERMANIUM
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[8] 2 EMISSION STABILIZERS FOR ELECTRON-BOMBARDMENT FURNACES
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[9] ELECTRON-BOMBARDMENT INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON
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