ELECTRON-BOMBARDMENT INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON

被引：3

作者：

HATANAKA, Y

OI, H

ANDO, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：637 / 639

页数：3

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