ELECTRON-BOMBARDMENT INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON

被引：3
|
作者：
HATANAKA, Y
OI, H
ANDO, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期
关键词：
D O I：
10.1063/1.92837
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：637 / 639
页数：3
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