ELECTRON-BOMBARDMENT INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON

被引：3

|

作者：

HATANAKA, Y

OI, H

ANDO, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：637 / 639

页数：3

相关论文

共 50 条

[31] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON
STAEBLER, DL
WRONSKI, CR
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268
[32] CURRENT-INDUCED DEFECT CONDUCTIVITY IN HYDROGENATED SILICON-RICH AMORPHOUS-SILICON NITRIDE
SHANNON, JM
ANNIS, AD
PHILOSOPHICAL MAGAZINE LETTERS, 1995, 72 (05) : 323 - 329
[33] RECOMBINATION EFFICIENCY OF RADIATION DEFECTS IN SILICON FORMED BY NEUTRON AND ELECTRON-BOMBARDMENT
VASILEV, AV
SMAGULOVA, SA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1082 - 1083
[34] SUBTHRESHOLD DEFECT FORMATION AS A RESULT OF ELECTRON-BOMBARDMENT OF SILICON-CARBIDE
KODRAU, NV
MAKAROV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 960 - 962
[35] EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURING ELECTRON-BOMBARDMENT OF SILICON
BOLDYREV, SN
MORDKOVICH, VN
OMELYANOVSKAYA, NM
FEKLISOVA, OV
YARYKIN, NA
SEMICONDUCTORS, 1994, 28 (10) : 1009 - 1011
[36] RATE OF FORMATION OF A-CENTERS IN SILICON SUBJECTED TO PULSED ELECTRON-BOMBARDMENT
ABDUSATTAROV, AG
EMTSEV, VV
LOMASOV, VN
MASHOVETS, TV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 101 - 102
[37] METAL INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON
ROBERTSON, AE
HULTMAN, LG
HENTZELL, HTG
HORNSTROM, SE
SHAOFANG, G
PSARAS, PA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1447 - 1450
[38] ELECTRON-BOMBARDMENT INDUCED DEFECT STATES IN P-INP
LEVINSON, M
TEMKIN, H
BONNER, WA
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 423 - 432
[39] METASTABLE FRAGMENTATION OF NH3 INDUCED BY ELECTRON-BOMBARDMENT
CARNAHAN, BL
ZIPF, EC
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (02): : 130 - 130
[40] AN ATR ANALYSIS OF SURFACE-ROUGHNESS INDUCED BY ELECTRON-BOMBARDMENT
HUMBERT, A
HANUS, J
SURFACE SCIENCE, 1983, 129 (01) : 265 - 280

← 1 2 3 4 5 →