ON BREAKDOWN VOLTAGE OF P-N-JUNCTIONS OBTAINED BY ZONAL MELTING METHOD WITH TEMPERATURE GRADIENT AT LINEAR ZONES

被引：0

|

作者：

LOZOVSKII, VN

POPOV, VP

DAROVSKII, NI

机构：

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1969年 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：91 / +

页数：1

相关论文

共 50 条

[21] CAPACITANCE OF P-N-JUNCTIONS UNDER ELECTRICAL BREAKDOWN
NATARAJAN, K
RAMKUMAR, K
SATYAM, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02): : K269 - K272
[22] P-N-JUNCTIONS INTERCHANGEABLE TEMPERATURE TRANSDUCERS
ENFIELD, CG
HSIEH, JJC
SOIL SCIENCE, 1972, 113 (01) : 59 - &
[23] INFRARED OBSERVATION OF BREAKDOWN BEHAVIOR OF HIGH-VOLTAGE P-N-JUNCTIONS AND P-N-P STRUCTURES IN SILICON
VOSS, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 299 - 303
[24] EFFECT OF DU/DT ON AVALANCHE BREAKDOWN OF P-N-JUNCTIONS
KYUREGYAN, AS
SOVIET MICROELECTRONICS, 1989, 18 (01): : 38 - 43
[25] AVALANCHE BREAKDOWN LUMINESCENCE OF DIFFUSED P-N-JUNCTIONS IN SILICON
VLADIMIROV, AA
KOMAROVSKIKH, KF
FURSIN, GI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1211 - 1212
[26] AVALANCHE BREAKDOWN CHARACTERISTICS OF ALLOYED SILICON P-N-JUNCTIONS
TYAGI, MS
INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (01) : 25 - 32
[27] AVALANCHE BREAKDOWN OF PLASTICALLY DEFORMED SILICON P-N-JUNCTIONS
KYUREGYAN, AS
SOROKIN, YG
KOLTSOVA, TG
SOVIET MICROELECTRONICS, 1988, 17 (06): : 295 - 300
[28] INFLUENCE OF NEUTRON-IRRADIATION ON BREAKDOWN OF P-N-JUNCTIONS
KUZOVKINA, LI
FEDOSOV, VI
LAPSHINA, EV
MELNIK, VG
SPIRIDONOVA, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 775 - 776
[29] METHOD FOR DETERMINING POSITION OF MICROPLASMA IN HIGH-VOLTAGE P-N-JUNCTIONS
MAGDEN, IN
SAFONOV, VA
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1976, 19 (01) : 255 - 256
[30] PLANAR ETCH METHOD FOR ENHANCED BREAKDOWN VOLTAGES IN SILICON PLANAR P-N-JUNCTIONS
SHENAI, K
LIN, HC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C103 - C103

← 1 2 3 4 5 →