CAPACITANCE OF P-N-JUNCTIONS UNDER ELECTRICAL BREAKDOWN

被引：1

作者：

NATARAJAN, K ^{[1
]}

RAMKUMAR, K ^{[1
]}

SATYAM, M ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT ELECT COMMUN ENGN,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K269 / K272

页数：4

共 50 条

[1] INVESTIGATION OF ELECTRICAL BREAKDOWN IN GAAS DIFFUSED P-N-JUNCTIONS
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