ION-IMPLANTED AL CONCENTRATION PROFILES IN UNANNEALED AND ANNEALED 6H SIC

被引：0
|
作者：
COMAS, J [1 ]
LUCKE, W [1 ]
ADDAMIAN.A [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20390
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1973年 / 18卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：606 / 606
页数：1
相关论文
共 50 条
  • [1] EVALUATION OF AL ION-IMPLANTED 6H-SIC SINGLE-CRYSTALS
    NAKATA, T
    MIZUTANI, Y
    MIKODA, M
    WATANABE, M
    TAKAGI, T
    NISHINO, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 131 - 133
  • [2] Ion-implanted B concentration profiles in Ge
    Suzuki, Kunihiro
    Ikeda, Keiji
    Yamashita, Yoshimi
    Takagi, Shin-ichi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3A): : 926 - 931
  • [3] CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON
    BADER, R
    KALBITZER, S
    APPLIED PHYSICS LETTERS, 1970, 16 (01) : 13 - +
  • [4] Quantitative carrier profiling in ion-implanted 6H-SiC
    Giannazzo, F
    Calcagno, L
    Raineri, V
    Ciampolini, L
    Ciappa, M
    Napolitani, E
    APPLIED PHYSICS LETTERS, 2001, 79 (08) : 1211 - 1213
  • [5] Defect accumulation and recovery in ion-implanted 6H-SiC
    Jiang, W
    Weber, WJ
    Wang, CM
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 319 - 324
  • [6] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN ION-IMPLANTED H-6 SIC
    PATRICK, L
    CHOYKE, WJ
    PHYSICAL REVIEW B, 1972, 5 (08): : 3253 - &
  • [7] Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC
    Chang, W
    Feng, ZC
    Lin, J
    Liu, R
    Wee, ATS
    Tone, K
    Zhao, JH
    SURFACE AND INTERFACE ANALYSIS, 2002, 33 (06) : 500 - 505
  • [8] COMPARISON OF DOPING PROFILES IN CAPLESS ANNEALED AND DIELECTRICALLY CAPPED - ANNEALED ION-IMPLANTED GAAS
    SIU, DP
    IMMORLICA, AA
    JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (05) : 857 - 868
  • [9] Electrical characteristics of Al+ ion-implanted 4H-SiC
    Tanaka, H
    Tanimoto, S
    Yamanaka, M
    Hoshi, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 803 - 806
  • [10] Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions
    Kozanecki, A
    Jeynes, C
    Sealy, BJ
    Nejim, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 : 1272 - 1276
12345