ION-IMPLANTED AL CONCENTRATION PROFILES IN UNANNEALED AND ANNEALED 6H SIC

被引：0
|
作者：
COMAS, J [1 ]
LUCKE, W [1 ]
ADDAMIAN.A [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20390
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1973年 / 18卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：606 / 606
页数：1
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