ION-IMPLANTED AL CONCENTRATION PROFILES IN UNANNEALED AND ANNEALED 6H SIC

被引：0
|
作者：
COMAS, J [1 ]
LUCKE, W [1 ]
ADDAMIAN.A [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20390
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1973年 / 18卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：606 / 606
页数：1
相关论文
共 50 条
  • [21] ENHANCED OXIDATION OF ION-IMPLANTED SI-FACE OF 6H-SIC
    UENO, K
    SEKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1121 - L1123
  • [22] Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC
    Costa, A. R. G.
    Wahl, U.
    Correia, J. G.
    David-Bosne, E.
    Amorim, L. M.
    Augustyns, V.
    Silva, D. J.
    da Silva, M. R.
    Pereira, L. M. C.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (01)
  • [23] Formation of interfacial dislocations in ion-implanted 4H-SiC epilayers annealed with a large temperature gradient
    Gao, Jiaxu
    Zhang, Xuan
    Zhang, Li
    Wang, Lu
    Fang, Dan
    Wei, Zhipeng
    Zhang, Baoshun
    Zeng, Zhongming
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (03)
  • [24] 2.5 kV ion-implanted p(+)n diodes in 6H-SiC
    Rottner, KH
    Schoner, A
    Savage, SM
    Frischholz, M
    Hallin, C
    Kordina, O
    Janzen, E
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1485 - 1488
  • [25] PROPERTIES OF ION-IMPLANTED, LASER ANNEALED SEMICONDUCTORS
    WHITE, CW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (02): : 106 - 106
  • [26] Optical characterization of ion-implanted 4H-SiC
    Feng, ZC
    Yan, F
    Chang, WY
    Zhao, JH
    Lin, J
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 647 - 650
  • [27] The nature of damage in ion-implanted and annealed diamond
    Kalish, R
    Reznik, A
    Nugent, KW
    Prawer, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 626 - 633
  • [28] EFFICIENT LUMINESCENCE CENTERS IN H-IMPLANTED AND D-IMPLANTED 6H SIC
    CHOYKE, WJ
    PATRICK, L
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 414 - 414
  • [29] LUMINESCENCE-CENTERS IN H-IMPLANTED AND D-IMPLANTED 6H SIC
    PATRICK, L
    CHOYKE, WJ
    PHYSICAL REVIEW B, 1974, 9 (04): : 1997 - 1997
  • [30] Structural and electrical characterization of n+-type ion-implanted 6H-SiC
    Goghero, D
    Giannazzo, F
    Raineri, V
    Musumeci, P
    Calcagno, L
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 239 - 242
12345