SI ULTRASHALLOW P+N JUNCTIONS USING LOW-ENERGY BORON IMPLANTATION

被引：31

作者：

BOUSETTA, A ^{[1
]}

VANDENBERG, JA ^{[1
]}

ARMOUR, DG ^{[1
]}

ZALM, PC ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5 x 10(14) and 6 x 10(14) cm-2 and at substrate temperatures in the range 30-900-degrees-C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+ n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

引用

页码：1626 / 1628

页数：3

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