SI ULTRASHALLOW P+N JUNCTIONS USING LOW-ENERGY BORON IMPLANTATION

被引：31

作者：

BOUSETTA, A ^{[1
]}

VANDENBERG, JA ^{[1
]}

ARMOUR, DG ^{[1
]}

ZALM, PC ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5 x 10(14) and 6 x 10(14) cm-2 and at substrate temperatures in the range 30-900-degrees-C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+ n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

引用

页码：1626 / 1628

页数：3

共 50 条

[31] Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions
Girginoudi, D.
Tsiarapas, C.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 : 268 - 274
[32] ION-IMPLANTATION - A COMPARISON OF 3 TECHNIQUES FOR PROFILING ULTRASHALLOW P+-N JUNCTIONS
FELCH, SB
BRENNAN, R
CORCORAN, SF
WEBSTER, G
SOLID STATE TECHNOLOGY, 1993, 36 (01) : 45 - &
[33] Stability of ultrashallow junction formed by low-energy boron implant and spike annealing - Problem and solution
Shao, L
Wang, XM
Chen, H
Liu, JR
Bennett, J
Larsen, L
Chu, WK
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (06) : G82 - G84
[34] LOW-ENERGY BORON IMPLANTATION IN ISOTOPICALLY PURE SILICON BY SIMULATION
TSATIS, DE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 648 - 650
[35] Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation
Park, JW
Huh, YJ
Hwang, HS
APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1248 - 1250
[36] Effects of Ni silicidation on the shallow p+n junctions formed by BF2+ implantation into thin polycrystalline-Si films on Si substrates
Juang, Miin-Horng
Han, Sui-Chan
Hu, Man-Chun
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1998, 37 (10): : 5515 - 5518
[37] Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation
Appl Phys Lett, 9 (1248):
[38] Characteristics of shallow p+-n junctions formed by low-energy ion implantation and dual-step annealing processes
Kim, JY
Lee, CK
Kong, BS
Hong, SN
Lee, IK
Song, YS
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (04) : L817 - L820
[39] Effects of Ni silicidation on the shallow p+n junctions formed by BF2+ implantation into thin polycrystalline-Si films on Si substrates
Juang, MH
Han, SC
Hu, MC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (10): : 5515 - 5518
[40] CATHODOLUMINESCENCE STUDY OF THE DAMAGE INDUCED BY LOW-ENERGY BORON IMPLANTATION USING A CHEMICAL BEVEL
PAPADOPOULO, AC
DUBONCHEVALLIER, C
POUGNET, AM
KRAUZ, P
APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1526 - 1527

← 1 2 3 4 5 →