SI ULTRASHALLOW P+N JUNCTIONS USING LOW-ENERGY BORON IMPLANTATION

被引：31

作者：

BOUSETTA, A ^{[1
]}

VANDENBERG, JA ^{[1
]}

ARMOUR, DG ^{[1
]}

ZALM, PC ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5 x 10(14) and 6 x 10(14) cm-2 and at substrate temperatures in the range 30-900-degrees-C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+ n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

引用

页码：1626 / 1628

页数：3

共 50 条

[41] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS
YAU, LD
SAH, CT
SOLID-STATE ELECTRONICS, 1974, 17 (02) : 193 - 201
[42] RESPONSE OF P-I-N JUNCTIONS TO LOW-ENERGY BETA RAY EMITTERS
BAILY, NA
HILBERT, JW
HEALTH PHYSICS, 1966, 12 (05): : 705 - +
[43] Silicide as dopant source: Ultrashallow n and p junctions in silicon
Herner, SB
Gossmann, HJ
Tung, RT
Gila, BP
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 1224 - 1231
[44] Prediction of low-energy boron doping profile for ultrashallow junction formation by hybrid molecular dynamics method
Yabuhara, Hidehiko
Miyamoto, Akira
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
[45] ULTRASHALLOW P+-N JUNCTIONS SUITABLE FOR VLSI CMOS
CAREY, PG
SIGMON, TW
PRESS, RL
FAHLEN, TS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2532 - 2533
[46] Ultrashallow p+-n junctions in Si(111): Electron-beam diagnostics of the surface region
N. T. Bagraev
L. E. Klyachkin
A. M. Malyarenko
A. A. Andronov
S. V. Robozerov
Semiconductors, 1999, 33 : 51 - 55
[47] Study of low energy implants for ultrashallow junctions using thermal wave and optical techniques
Nicolaides, L
Salnick, A
Opsal, J
REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (01): : 563 - 565
[48] A model for the segregation and pileup of boron at the SiO2/Si interface during the formation of ultrashallow p+ junctions
Shima, A
Jinbo, T
Natsuaki, N
Ushio, J
Oh, JH
Ono, K
Oshima, M
JOURNAL OF APPLIED PHYSICS, 2001, 89 (06) : 3458 - 3463
[49] Ultrashallow p+-n junctions in Si(111):: electron-beam diagnostics of the surface region
Bagraev, NT
Klyachkin, LE
Malyarenko, AM
Andronov, AA
Robozerov, SV
SEMICONDUCTORS, 1999, 33 (01) : 51 - 55
[50] p+/n ultrashallow junctions in Si1-xGex formed by molecular beam epitaxy
Thompson, PE
Bennett, J
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (03) : G41 - G44

← 1 2 3 4 5 →