Effects of MeV Si ion irradiation on the properties of shallow P+N junctions

The effects of post-ion implantation on the properties of P + N junction formed by BF2 ion implantation in SiO2/ Si (1 0 0) have been studied in this paper. As for the post-irradiation using MeV Si ions, there is a critical dose for Si ions. When the dose is less than the critical dose, post MeV Si ion irradiation induces reduction of the anomalous diffusion of B atoms. However, when the dose is higher than the critical dose, MeV Si ion irradiation induces further enhancement of the anomalous diffusion of B atoms. As for the electrical properties of the P + N junction, post-ion irradiation using 1.0 MeV 5 x 10(14) Si/cm(2) reduced the density of the leakage currents by three orders of magnitude. The post-Si ion irradiation either by MeV ions or 70 keV ions leads to a reduction of the breakdown voltage of the junction. (C) 1998 Published by Elsevier Science B.V.