Effects of MeV Si ion irradiation on the properties of shallow P+N junctions

被引：0
|
作者：
Wang, ZL [1 ]
Zhao, QT
Li, MY
Gong, XJ
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Shantou Univ, Ctr Sci Res, Shantou 515063, Guangdong, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 135卷 / 1-4期
关键词：
ion; defect-engineering; leakage current;
D O I：
10.1016/S0168-583X(97)00603-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The effects of post-ion implantation on the properties of P + N junction formed by BF2 ion implantation in SiO2/ Si (1 0 0) have been studied in this paper. As for the post-irradiation using MeV Si ions, there is a critical dose for Si ions. When the dose is less than the critical dose, post MeV Si ion irradiation induces reduction of the anomalous diffusion of B atoms. However, when the dose is higher than the critical dose, MeV Si ion irradiation induces further enhancement of the anomalous diffusion of B atoms. As for the electrical properties of the P + N junction, post-ion irradiation using 1.0 MeV 5 x 10(14) Si/cm(2) reduced the density of the leakage currents by three orders of magnitude. The post-Si ion irradiation either by MeV ions or 70 keV ions leads to a reduction of the breakdown voltage of the junction. (C) 1998 Published by Elsevier Science B.V.
引用
收藏
页码：280 / 284
页数：5
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