共 50 条
- [1] FORMATION OF SHALLOW p + n JUNCTIONS BY B-ION IMPLANTATION IN Si SUBSTRATES WITH AMORPHOUS LAYERS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (05): : 568 - 573
- [2] FORMATION OF SHALLOW P+N JUNCTIONS BY DUAL F+/B+ IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 493 - 495
- [3] Effects of MeV Si ion irradiation on the properties of shallow P+N junctions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 135 (1-4): : 280 - 284
- [4] Effects of MeV Si ion irradiation on the properties of shallow P+N junctions Nucl Instrum Methods Phys Res Sect B, 1-4 (280-284):
- [6] Effects of Ni silicidation on the shallow p+n junctions formed by BF2+ implantation into thin polycrystalline-Si films on Si substrates Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1998, 37 (10): : 5515 - 5518
- [7] Effects of Ni silicidation on the shallow p+n junctions formed by BF2+ implantation into thin polycrystalline-Si films on Si substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (10): : 5515 - 5518
- [9] Formation of silicided shallow p+ n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 392 - 396