FORMATION OF SHALLOW p + n JUNCTIONS BY B-ION IMPLANTATION IN Si SUBSTRATES WITH AMORPHOUS LAYERS.

被引：0

作者：

Ishiwara, Hiroshi ^{[1
]}

Horita, Susumu ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Graduate, Sch of Science & Engineering,, Yokohama, Jpn, Tokyo Inst of Technology, Graduate Sch of Science & Engineering, Yokohama, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 05期

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摘要：

引用

页码：568 / 573

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[1] FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS
ISHIWARA, H
HORITA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 568 - 573
[2] FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALING
JUANG, MH
CHENG, HC
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2092 - 2094
[3] Formation of silicided shallow p+ n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 392 - 396
[4] FORMATION OF SHALLOW P + N JUNCTIONS BY DUAL F + /B + IMPLANTATION.
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[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 493 - 495
[5] Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation
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不详
[J]. Solid-State Electron., 9 (1763-1767):
[6] Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation
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Tiou, HK
[J]. SOLID-STATE ELECTRONICS, 1999, 43 (09) : 1763 - 1767
[7] Ultra shallow p+-n junctions in si produced by plasma immersion ion implantation
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[J]. MICRO- AND NANOELECTRONICS 2005, 2006, 6260
[8] DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON
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ANDERSON, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6336 - 6339
[9] FORMATION OF SHALLOW P+-N JUNCTIONS BY DUAL GE+/B+ IMPLANTATION
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 413 - 416
[10] FORMATION OF SHALLOW P+N JUNCTIONS BY DUAL F+/B+ IMPLANTATION
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 493 - 495

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