GROWTH AND PROPERTIES OF CDS EPITAXIAL LAYERS BY CLOSE-SPACED TECHNIQUE

被引：50

|

作者：

YOSHIKAWA, A ^{[1
]}

SAKAI, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3521 / 3529

页数：9

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