GROWTH AND PROPERTIES OF CDS EPITAXIAL LAYERS BY CLOSE-SPACED TECHNIQUE

被引：50
|
作者：
YOSHIKAWA, A [1 ]
SAKAI, Y [1 ]
机构：
[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期
关键词：
D O I：
10.1063/1.1663813
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3521 / 3529
页数：9
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