GROWTH AND PROPERTIES OF CDS EPITAXIAL LAYERS BY CLOSE-SPACED TECHNIQUE

被引：50
|
作者：
YOSHIKAWA, A [1 ]
SAKAI, Y [1 ]
机构：
[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期
关键词：
D O I：
10.1063/1.1663813
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3521 / 3529
页数：9
相关论文
共 50 条
  • [31] MEASUREMENT OF CATHODE PROPERTIES IN CLOSE-SPACED DIODE TESTERS
    SCOTT, JB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 593 - 595
  • [32] CdS films prepared by the close-spaced sublimation and their influence on CdTe/CdS solar cell performance
    Ferekides, CS
    Marinskiy, D
    Marinskaya, S
    Tetali, B
    Oman, D
    Morel, DL
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 751 - 756
  • [33] Physical behaviour of nanocrystalline ZnS layers grown by close-spaced evaporation
    Prathap, P.
    Subbaiah, Y. P. V.
    Reddy, K. T. Ramakrishna
    SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY, 2007, 37 (06) : 493 - 496
  • [34] The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation
    Rose, DH
    Levi, DH
    Matson, RJ
    Albin, DS
    Dhere, RG
    Sheldon, P
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 777 - 780
  • [35] EPITAXIAL-GROWTH OF SINGLE-CRYSTAL CD1-XZNXS LAYERS ON (111) GAAS SUBSTRATES USING CLOSE-SPACED GEOMETRY
    FRANZOSI, P
    GHEZZI, C
    GOMBIA, E
    JOURNAL OF CRYSTAL GROWTH, 1978, 44 (03) : 306 - 314
  • [36] Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition
    Abken, Anke E.
    Halliday, D. P.
    Durose, Ken
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
  • [37] GROWTH OF CDTE-FILMS BY CLOSE-SPACED VAPOR TRANSPORT
    ANTHONY, TC
    FAHRENBRUCH, AL
    BUBE, RH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1296 - 1302
  • [38] Growth and optical properties of epitaxial layers of CdS and CdSe
    Grun, M.
    Becker, U.
    Giessen, H.
    Gilsdorf, Th.
    Zhou, F.
    Loidolt, J.
    Muller, M.
    Zangerle, H.
    Hetterich, M.
    Klingshirn, C.
    Optical Materials, 1993, 2 (03) : 163 - 168
  • [39] Growth and characterization of close-spaced vapor transport GaAs layers, using atomic hydrogen as the initial reactant
    Gomez, E
    Silva, R
    SilvaAndrade, F
    GraciaJimenez, JM
    REVISTA MEXICANA DE FISICA, 1997, 43 (05) : 785 - 794
  • [40] Close-Spaced Epitaxial Growth of GaAs(x) P(1-x) from Powder GaAs and GaP
    Purohit, R. K.
    JOURNAL OF MATERIALS SCIENCE, 1968, 3 (03) : 330 - 332
12345