DOPING OF GAAS EPITAXIAL LAYERS GROWN ON (100)GAAS BY CLOSE-SPACED VAPOR TRANSPORT

被引：18
|
作者：
KOSKIAHDE, E [1 ]
COSSEMENT, D [1 ]
PAYNTER, R [1 ]
DODELET, JP [1 ]
机构：
[1] CONCORDIA UNIV, MONTREAL H3G 1M8, QUEBEC, CANADA
来源：
CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期
关键词：
D O I：
10.1139/p89-044
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：251 / 258
页数：8
相关论文
共 50 条
  • [1] Doping and residual impurities in GaAs layers grown by close-spaced vapor transport
    [J]. 1600, (73):
  • [2] DOPING AND RESIDUAL IMPURITIES IN GAAS-LAYERS GROWN BY CLOSE-SPACED VAPOR TRANSPORT
    LEBEL, C
    COSSEMENT, D
    DODELET, JP
    LEONELLI, R
    DEPUYDT, Y
    BERTRAND, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) : 1288 - 1296
  • [3] OPTIMIZATION OF THE SURFACE-MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY CLOSE-SPACED VAPOR TRANSPORT
    HUANG, Z
    GUELTON, N
    COSSEMENT, D
    GUAY, D
    STJACQUES, RG
    DODELET, JP
    [J]. CANADIAN JOURNAL OF PHYSICS, 1993, 71 (9-10) : 462 - 469
  • [4] GaAs layers grown by the close-spaced vapor transport technique using two transport agents
    Gomez, E
    Valencia, R
    Silva, R
    Silva-Andrade, F
    [J]. CURRENT PROBLEMS IN CONDENSED MATTER, 1998, : 347 - 352
  • [5] HOLE TRAPS IN N-TYPE EPITAXIAL GAAS-LAYERS GROWN BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE
    BRETAGNON, T
    JEAN, A
    ARNAUD, G
    BASTIDE, G
    [J]. SOLID STATE COMMUNICATIONS, 1990, 74 (04) : 223 - 226
  • [6] MIDGAP ELECTRON TRAPS IN N-TYPE GAAS EPITAXIAL LAYERS GROWN BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE
    BRETAGNON, T
    JEAN, A
    SILVESTRE, P
    BOURASSA, S
    LEVANMAO, R
    LOMBOS, BA
    COSSEMENT, D
    LEBEL, C
    DODELET, JP
    [J]. CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 407 - 411
  • [7] HREM STUDY OF GAAS-LAYERS GROWN ON GE BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE
    GUELTON, N
    FEUILLET, G
    SAINTJACQUES, RG
    DODELET, JP
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 365 - 368
  • [8] TEM STUDY OF GAAS FILMS GROWN ON GAAS SUBSTRATES BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE
    GUELTON, N
    SAINTJACQUES, RG
    COSSEMENT, D
    LALANDE, G
    DODELET, JP
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 415 - 418
  • [9] EPITAXY OF GAAS BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE
    COTE, D
    DODELET, JP
    LOMBOS, BA
    DICKSON, JI
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (09) : 1925 - 1934
  • [10] GROWTH BY THE CSVT (CLOSE-SPACED VAPOR TRANSPORT) TECHNIQUE AND CHARACTERIZATION OF EPITAXIAL GAAS-LAYERS ON GE SUBSTRATES
    KOSKIAHDE, E
    COSSEMENT, D
    GUELTON, N
    FILLIT, R
    SAINTJACQUES, RG
    DODELET, JP
    [J]. CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 390 - 405
12345