OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES

被引：45
|
作者：
KASUPKE, N
HENZLER, M
机构：
来源：
SURFACE SCIENCE | 1980年 / 92卷 / 2-3期
关键词：
D O I：
10.1016/0039-6028(80)90213-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：407 / 416
页数：10
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