Atomic steps on an ultraflat Si(111) surface upon sublimation

被引：1

作者：

Sitnikov, S. V. ^{[1
]}

Latyshev, A. V. ^{[1
,2
]}

Kosolobov, S. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 05期

基金：

俄罗斯科学基金会;

关键词：

REFLECTION ELECTRON-MICROSCOPY; IN-SITU; PHASE-TRANSITION; SILICON; DIFFUSION; EQUILIBRIUM; KINETICS; GROWTH; OXYGEN; TRANSFORMATIONS;

D O I：

10.1134/S1063782616050201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The kinetics of atomic steps on an ultraflat Si(111) surface is studied by in situ ultrahigh-vacuum reflection electron microscopy at temperatures of 1050-1350A degrees C. For the first time it is experimentally shown that the rate of displacement of an atomic step during sublimation nonlinearly depends on the width of the adjacent terrace. It is established that the atomic mechanism of mass-transport processes at the surface at temperatures higher than 1200A degrees C is controlled by nucleation and the diffusion of surface vacancies rather than of adsorbed Si atoms. The studies make it possible to estimate the activation energy of the dissolution of vacancies from the surface into the bulk of Si. The estimated activation energy is (4.3 +/- 0.05) eV.

引用

页码：596 / 600

页数：5

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