OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES

被引：45

|

作者：

KASUPKE, N

HENZLER, M

机构：

来源：

SURFACE SCIENCE | 1980年 / 92卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(80)90213-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：407 / 416

页数：10

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