POLAR HALL-EFFECT AND MAGNETORESISTANCE IN N-SILICON

被引：2

|

作者：

HEINRICH, H

KRIECHBAUM, M

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1972年 / 50卷 / 01期

关键词：

D O I：

10.1002/pssb.2220500161

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：K45 / +

页数：1

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